Àíãëî-ðóññêèé òåðìèíîëîãè÷åñêèé ñëîâàðü ïî ìèêðî- è íàíîñèñòåìíîé òåõíèêå - ñîäåðæàíèå
À 228
Ablation 228
Absorption 228
Accelerometer 228
Accelerated life testing 228
Accuracy 228
Acid 228
Actuator 228
Acoustic electromotive force element 229
Action potential 229
Active area 229
Active catheter 229
Active layer 229
Adenosine TriPhosphate (ATP) 229
Adhesion 229
Adhesive bonding 229
Adjustment 229
Adsorption 230
Aliasing 230
Aligner 230
Alignment 230
Alloy expansion actuator 230
Ambient 230
Amorphous silicon (a-Si) 230
Amplification 231
Anchor 231
Annealing 231
Anisotropic etching 231
Anisotropy 231
Anodic bonding 231
Application-Specific Integrated Circuit (ASIC) 231
Aqueous 232
ARDE (Aspect Ratio Dependent Etching) 232
Area array 232
Argon 232
Artificial organ 232
Ashing 232
Aspect ratio 232
Assembly 232
Astigmatic focus error detection 232
Atomic Force Microscope (AFM) 232
Autonomous distributed control 233
 233
Back-grinding 233
Backside patterning 233
Baked 233
Bandwidth 233
Batch fabrication 234
BAW sensor 234
Beam 234
Beam processing 234
Behavioral model 234
BioMEMS 234
Bimetal 234
Biomimetics 234
Birds beak 235
Boat 235
Bode plot 235
Bonding 235
Bond pad 235
Boron etch stop technique 235
Boule 235
Boundary 236
Boundary Element Analysis (BEA) 236
Bow 236
Breaking strength 236
Buckminsterfullerene 236
Buckyball 236
Buffered Oxide Etch (BOE) 236
Build-in 237
Bulk micromachining 237
Bumping 237
Buried layer 237
Burn-in 237
C 237
Caltech Intermediate Format (CIF) 237
Cantilever 237
Capacitive displacement meter 237
Capacitor 237
Carbohydride 238
Carbon Nanotube (CNT) 238
Carriers 238
Castiglianos theorem 238
Catalyst 238
Cauchy number 238
Cell 238
Cell fusion 239
Cell surgery 239
Ceramic 239
Cermet 239
Charge density 239
Charge Coupled Device (CCD) 239
Chemical bearing 239
Chemical Mechanical Polishing (CMP) 239
Chemical Vapour Deposition (CVD) 240
Chemo-Mechanical Planarization (CMP) 240
Chromatography 240
Circuit layout 240
Clamp 240
Clean room 240
Closed-loop feedback 240
Coating 240
Coefficient of static friction 241
Coefficient of Thermal Expansion (CTE) 241
Coherently Diffracting Domains (CDD) 241
Comb drive 241
Compound 241
Computer-Aided Design (CAD) 241
Concentration dependent etching 241
Conductor 241
Conformal 242
Conservation law 242
Contact lithography 242
Contact printing 242
Copolymer 242
Cost of ownership 242
Coupling coefficient 243
Covalent bond 243
Cross-axis sensivity 243
Cross section 243
Crucible 243
Ciystal orientation 243
Curie point 243
Curve fitting 243
Czochralski method 244
D 244
Damascene 244
Damping matrix 244
Deep Reactive Ion Etching (DRIE) 244
Deflection 244
Deformation 244
Deionized water 244
Dendrimer 244
Density 245
Deposition 245
Descum 245
Design kit 245
Design layout and validation 245
Design of Experiments (DOE) 245
Design rules 245
Deviation 245
Devitrification 245
Device 246
Die 246
Dielectric constant 246
Differential Algebraic Equations (DAEs) 246
Difference quantity 246
Diffraction 246
Diffusion 246
Diffusion bonding 247
Diffusion gauge 247
Dislocation 247
Dissolved wafer process 247
Doping 247
Dose (Q) 247
Drift 248
Dry etching 248
Dry strip 248
Durability 248
E 248
Efficiency 248
Ejection 248
Elasticity 249
Elastomer 249
Electrochemical etch stop technique 249
Electrochemical passivation technique 249
Electro-Discharge Machining (EDM) 249
Electroforming 250
Electromagnetic actuator 250
Electromagnetic waves 250
Electromigration 250
Electron 251
E-beam lithography (electron beam lithography) 251
Electronic Design Automation (EDA) 251
Electronic nose (e-nose) 251
Electron Probe MicroAnalysis (EPMA) 251
Electroplate 252
Electrostatic actuator 252
Electrostatic Discharge (ESD) 252
Electrostatic Force Microscope (EFM) 253
Ellipsometer 253
Emitter 253
Emulsion mask 253
Enthalpy 254
Enzymes 254
Epipoly 254
Epitaxy 254
Equilibrium process 254
Equilibrium state 254
Etchback planarization 255
Etch hole 255
Etching 255
Etch pit 255
Etch profile 255
Etch rate 255
Etch stop 255
Etch-stop technique 256
Ethylene Diamine Pyrocatechol (EDM) 256
Ethylene glycol 256
Eutetic bonding 256
Eutetic point 256
Evaporation 256
Excimer laser 256
Eximer laser micromachining 257
Exposure 257
Extrinsic 257
F 257
Fabrication 257
Fault models 258
Ferroelectric 258
Film electrostatic actuator 258
Finite Element Analysis (FEA) 258
Fixed-fixed beam 259
Flagellar motor 259
Flat pack 259
Flexible microactuator 259
Flip chip 259
Flow quantity 260
Flow sensor 260
Fluorosilicate Glass (FSG) 260
Focused Ion Beam (FIB) 260
Focused ion beam machining 260
Foundry 261
Fourier number 261
Frequency 261
Frequency domain 261
Frequency response 261
Friction 261
Froude number 262
Fullerene 262
Fusion bonding 262
G 263
Gain 263
Gallium arsenide (GaAs) 263
Gap 264
Gap model 264
Gel 264
Germanium 264
Gettering 264
Glass 264
Glassivation 264
Grain 265
Graphic Design Station II (GDSII) 265
Grinding 265
Groove 265
H 265
Hall effect sensor 265
Hard bake 265
Hardened photoresist 266
Hardness 266
Hardware Description Language (HDL) 266
HDL-A/MS 266
Hertz 266
Heteroepitaxy 266
Hexamethyl Disilazane (HM DS) 266
High Aspect Ratio Micromachining (HARM) 267
High-Efficiency Particle Air (HEPA) 267
High energy ion implantation 267
High pressure oxidation 267
Hillock 268
Hole 268
Homoepitaxy 268
Homogeneous 268
Honing 268
Hot embossing 268
Hydraulic actuator 269
Hydrazine 269
Hydrofluoric acid (HF) 269
Hydrogen 269
Hydrogen storage alloy 269
Hysteresis cycle 270 270
Implantation 270
Impurity 271
Inductively coupled plasma 271
Inductor 271
Inertial sensor 272
Infrared 272
In homogeneous 272
Insulator 272
Integrated chemical analyzing system 272
Integrated Circuit (IC) 273
Integrated mass flow controller 273
Integrated MicroEIectroMechanical Systems (IMEMS) 273
Integrated microprobe 274
Integrated optics 274
Integrated strain sensor 274
Intelligent sensor 274
Interconnect, interconnection 275
Interferometer 275
Interlevel planarization 276
Intrinsic 276
Ion 276
Ion beam etching 276
Ion beam machining 277
Ion beam milling 277
Ion implantation 278
Ion plating 278
Ion Sensitive Field Effect Transistor (ISFET) 279
Ionized metal plasma physical vapor deposition 279
Ionic bond 279
Isolation 279
Isolation diffusion 280
Isotropic 280
Isotropic etching 280
Isovalent doping 280
J 281
Josephson junction 281
Joule effect 281
Junction 282
Junction Field Effect Transistor (JFET) 282
Ê 283
Killer defect 283
Kilo 283
Kinesin 283
KirchHoffian Network (KHN) 283
Known Good Die (KGD) 284
KrI 284
L 284
Lab-on-chip 284
Laminar flow 285
Langmuir-Blodgett film 285
Lapping 285
Laser-assisted Chemical Vapour Deposition (LCVD) 285
Laser drilling 286
Laser interferometry 286
Laser tweezers 286
Lattice 286
Layer thickness 286
Layer Thickness Variation (LTV) 287
Layout 287
Leadframe 287
Leakage current 287
Left-hand orthogonal crystallographic axial set 287
Lewis acid 287
Lewis base 288
Lift-off technique 288
LIGA 288
Light driven actuator 289
Light scattering 289
Linear actuator 289
Linearity 289
Liquid crystal 289
Lithography 291
Loaded brush 292
Localized Electrochemical Deposition (LED) 292
LOCOS (LOCal Oxidation of Silicon) 292
Lost wafer process 292
Low-ê material 292
Low Pressure Chemical Vapor Deposition (LPCVD) 293
Low Temperature Oxide (LTO) 293
Luminescence 293
Lumped parameters 294
M 294
M3S (Modular Monolithic MEMS) 294
Magnetoresistive Random-Access Memories (MRAMs) 295
Mask 295
Mechanical shock 295
Melt 295
MEMCAD (MicroElectroMechanical Computer-Aided Design) 295
MEMS Industry Group (MIG) 296
Mesoscale machining 296
Metallization 296
Microchamber 296
Microcutting and grinding 296
Microdrilling 296
MicroElectroMechanical Systems (MEMS) 296
Microelectronics Center of North Carolina (MCNC) 297
Microengineering 297
MicroFlumes (Micro Fluidic molecular systems) 297
Microforging 297
Microgripper 297
Microgyroscopy 297
Microinjection Molding (MIM) 297
Micromilling 298
Micromirrors 298
Micromolding 298
Micron 298
Micro Optical Electro Mechanical Systems (MOEMS) 298
Micropump 299
Microrelay 299
Microscopic surgery 299
Microsensor 299
Microstructures 300
Microsystems technology 300
Microswitch 300
MicroTAS (MicroTotal Analysis System, mTAS) 300
Microtechnology 300
Microtribology 300
Microtweezer 301
Microvalve 301
Microwave 301
Miller index 301
Modification 302
Modified Nodal Analysis (MNA) 302
Modular System for Constraint Nonlinear Microsystem Optimization
(MOSC1TO) 303
Mohs’ scratch hardness 303
Molecular dynamics 303
Molecular Beam Epitaxy (MBE) 304
Molecular layer epitaxy 304
Monte-Carlo method 304
Moore’s law 304
MOSIS (Metal Oxide Semiconductor Implementation System) 304
Movable part 305
Moving mask lithography process 305
Multidomain system 305
Multipole 305
Multi-User MEMS Process (MUMPs) 305
Murphy-Seeds model 307
N 307
Nanometer 307
Nanotechnology 307
Native oxide 307
Negative lithography 307
Negative resist 307
Netlist 307
Nitinol (nickel titanium alloy) 308
Nitric acid (HN03) 308
Nitride 308
Nitrogen 308
Nitrous oxide (N20) 308
Nodal analysis 308
Node 309
Noise density 309
Non-contact handling 309
Nonlinearity 309
Notch 309
Novolak 309
Numerical Aperture (NA) 309
N-well 309
Î 309
Ohmic contact 309
Operating temperature 310
Optical attenuator 310
Optical lithography 310
Optical Proximity Correction (OPC) 310
Optical pyrometer 310
Optoceramic materials 310
Ordinary Differential Equations (ODEs) 310
Osmosis 310
Outgassing 311
Overlay 311
Overlay budget 311
Oxidation 311
Oxygen 311
P 311
Package 311
Packaging 312
Partial Differential Equations (PDEs) 312
Passivation 312
Patterned etching 312
Pattern generator 312
Pattern wafers 313
Patterning 313
Pellicle 313
Perovskite 313
Phase transition 313
Phonon 313
Phosphine 314
Phosphorus 314
Photo-Acid Generator (PAG) 315
Photodiode 315
Photolithography 315
Photomask 316
Photopolymerizalion 316
Photoresist 316
Photostrictive actuator 317
Photostrictive effect 317
Photovoltaic cell 317
Physical Liquid Deposition (PLD) 318
Piezoceramic 318
Piezoelectric actuator 318
Piezoelectric constant 319
Piezoelectric linear actuator 319
Piezoelectric material 319
Pinhole 320
Pipe inspection microrobot 320
Plasma Enhanced Chemical Vapor Deposition (PECVD) 321
Plasma etching 321
Plastic defonnalion 322
Plasticizer 322
PLZT 322
Pneumatic rubber actuator 322
Point defects 322
Poisson’s ratio 323
Polimer 323
Polishing 324
Polishing pads 324
Polycide 324
PolyDiMethylSiloxane (PDMS) 324
Polyimide 325
Polymer actuator 325
PolyMethylMethAcrylate (PMMA) 325
Polysilicon (polycrystalline silicon) 325
PolyVinyliDene Chloride (PVDC) 326
PolyVinyliDeneFlouride (PVDF) 326
Porosilicon 326
Positive photoresist 328
Post-Exposure Bake (PEB) 328
Potassium hydroxide (KOH) 328
Powder blasting 328
Power 329
Precise positioning 329
Precision 329
Precursor 329
Pressure sensor 329
Principal Component Analysis (PCA) 329
Probing 329
Process design rules 329
Projection lithography 329
Proof mass 330
Proximity aligner 331
Proximity lithography 331
P-type silicon 331
Purge 331
Pyrex 331
Pyroelectric 331
Pyrolysis 332
PZT 332
Q 332
Quad Flat Pack (QFP) 332
Quadrupole illumination 332
Quadrupole Mass Analyzer (QMA) 332
Qualification 332
Quality Factor (Q Factor) 333
Quantum dot 333
Quantum physics 333
Quantum well 334
Quartz 334
Quartz micro balance sensor module 334
R 335
Radical 335
Radio Frequency (RF) 335
Range 335
Rapid Thermal Processing (RTP) 335
RCA clean 335
Reaction Injection Molding (RIM) 335
Reactive Ion Etching (RIE) 335
Reactivity 335
Recombinant DNA 336
Recrystallization 336
Redistribution 336
Reduced system 336
Reduction 336
Reflow 336
Refractive index 336
Refractory 337
Registration overlay 337
Release etch 337
Released layers 337
Remanent polarization 337
Repeatability 337
Replication 337
Reproducibility (of measurement) 337
Residual stress 337
Resistance 337
Resolution 337
Resonator 337
Response characteristic 338
Response time 338
Reticle 338
Retrograde well 338
Reynolds number 338
RF MEMS 339
RF sputtering 339
Rhodopsin 339
RiboNucleic Acid (RNA) 339
Right-hand orthogonal crystallographic axial set 339
Rinse 339
Rochelle salt 339
Rotaiy actuator 339
S 340
Sacrificial anode 340
Sacrificial layer 340
Sacrificial Layer Etching (SLE) 340
Scale effect 340
Scaling 341
Scanning Electron Microscope (SEM) 341
Scanning Probe Microscope (SPM) 342
Scanning Tunneling Microscope (STM) 342
Schottky contact 342
Schottky defect 343
Schottky diode 343
Secondary Ion Mass Spectroscopy (SIMS) 343
Secondary structure of protein 344
Selective etching 344
Selectivity 344
Self-assembly 344
Self-heating 345
Semiconductor 345
Sensitivity 346
Separation by Implantation of Oxygen (SI MOX) 346
Shape memory alloy 346
Shape memory alloy actuator 346
Shape memory effect 346
Shape memory polymer 347
Sheet resistance 347
Shim 347
Shredinger Wave Equation (SWE) 347
Shrinkage 348
Signal-to-Noise Ratio (SNR) 348
Silane (SiH4) 348
Silicon 348
Silicon dioxide 348
Silicon fusion bonding 348
Silicon nitride 349
Silicon on Insulator (SOI) 349
Silicon on Sapphire (SOS) 350
Silicon tetrachloride 351
Simulation 351
Simulation Program for Integrated Circuits Emphasis (SPICE) 351
Single crystal 351
Single Crystal Reactive Ion Etching and Metallization (SCREAM) 351
Single Electron Device (SED) 351
Sintering 352
Slip 352
Slurry 352
Smart actuator 352
Smart dust 352
Smart pill 352
Smart sensor 353
Smart surface 353
Soft bake 353
Soft lithography 353
Sol-gel conversion actuator 353
Solid state 353
Solid-state image sensor 354
Solvent 354
Span 354
Specific heat 354
Spider bonding 354
Spin coating 354
Spontaneous emission 354
Spontaneous polarization 355
Sputtering 355
Stability 355
Standard atmosphere 355
Standard Hydrogen Electrode (SHE) 355
Static frictional force 355
Stator 355
Steady state analysis 355
Step coverage 355
Step response 356
Stepper 356
Stereochemistry 356
Stereolithography 356
Stiction 357
Stiffness 357
Stimulated emission 357
Stoichiometry 357
Strain 357
Strain gauge 357
Stress 357
Stress corrosion (cracking) 358
Stripping 358
Structural material 358
Structure unit 358
SU-8 358
Subset 358
Substrate 358
SUMMiT (Sandia Ultra Planar Multi-level MEMS Technology) 358
Superconduction levitated actuator 359
Superconductivity 359
Superconducting quantum interference device (SQUIDS) 359
Superconductor 359
Superlattice 359
Surface Acoustic Wave (SAW) actuator 360
Surface Acoustic Wave (SAW) sensors 360
Surface micromachining 361
Surface Mount Technology (SMT) 361
Surface passivation 361
Surface roughness 362
Surface smoothness 362
Surface tension 362
Swell 362
System-level model 362
T 362
Tactile sensor 362
Taper 362
Tape Automated Bonding (TAB) 362
Taq DNA polymerase 363
Target 363
Taxonomy 363
Temperature Coefficient of Resistance (TCR) 364
Tensile strength 364
Terminal 364
Tertiary structure of protein 364
Tesla 364
Tetra Ethyl Ortho Silane (TEOS) 364
Tetra Methyl Ammonium Elydroxide (TMAH) 364
Thermal actuator 365
Thermal conductivity 365
Thermal expaasion coefficient 365
Thermistor 365
Thennocompression bonding 366
Thermocouple 366
Thermoplastic polymer 366
Thermoset polymer 366
Thermosonic bonding 367
Thick film technology 367
Thin film technology 367
Threshold 367
Time-consuming 367
Titanium nitride 367
Titatium silicide 368
Torque 368
Torr 368
Torsional micromirror 368
Total Thickness Variation (TTV) 368
Toughness 368
Transcription 368
Transducer 368
Transduction mode (direct or indirect) 369
TRNA (Transfer RNA) 369
Transient analysis 369
Transient response 369
Transistor 369
Translation 370
Transmission Electron Microscope (ÒÅÌ) 370
Trench 370
Tribology 370
Trigger 370
Twinning 371
Twin well 371
Tungsten Hexaflouride 371
Tungsten Inert Gas (TIG) 371
Turbulent flow 371
Type 371
U 371
U-groove 371
Ultra High Frequency (UHF) 371
Ultra Large Scale Integration (ULSI) 371
Ultra Low Penetration Air (ULPA) 371
Ultrascope 371
Ultrasonic bonding 371
Ultrasonic impact grinding 372
Ultrasonic motor 372
Ultra Thin Silicon on Sapphire (UTSi) 372
Ultraviolet cleaning 373
Ultraviolet laser exposure 373
Ultraviolet rays (UV) 373
Uncover 373
UnderBump Metallization (UBM) 373
Undercoat 373
Undercutting 373
Undoped 373
Unexposed 373
Unipolar 373
Unit cell 374
Utility fog 374
V 374
Vacancy 374
Vacuum infrared process 375
Vacuum microelectronics device 375
Valence electrons 375
Van der Pauw method 375
Van der Waals forces 375
Vapor deposition 376
Vapor plating 376
Vapor priming 376
Varactor 376
Variable gap electrostatic actuator 376
Verification 377
Vertical-Cavity Surface-Emitting Laser (VCSEL) 377
Very high-speed integrated-circuit Elardware Description Language
(VHDL) 377
V-groove 377
Via hole 377
Vibration sensor 377
Viscous force 377
Visible light 378
VisSim 378
Vitrification 378
Volatile 378
W 378
Wafer 378
Wafer bonding 378
Wafer fabrication 379
Wafer size 379
Wafer yield 379
Wafers boat 379
Water deionization 379
Watt (W) 379
Waveguide 379
Wave equation 379
Wavelength 379
Wear 379
Weber 380
Weber number 380
Welding 380
Well 380
Wet anisotropic etching 380
Wet etching 381
Wet oxidation 381
Wetting 381
Whisker 381
Wire bonding 382
Wobble motor 382
Working plate 383
Wurtzite structure 383
X 383
X-Ray 383
X-Ray Fluorescence (XRF) 383
X-Ray lithography 384
X-ray Photoelectron Spectroscopy (XPS) 384
Y 385
Yaw rate sensor 385
Yellow room 385
Yield 385
Yield model 385
Yokogawa differential resonant pressure sensor 385
Young modulus 386
Yo-yo 386
Yttrium Aluminum Garnet (YAG) 386
Yttrium Barium Copper Oxide (YBACUO) 386
Yttrium Iron Garnet (YIG) 386
Yttrium iron garnet filter 386
Z 386
Zapper (laser) 386
Zener diode 386
Zephyr 386
Zero offset 386
Zeta potential 386
Zinc oxide 387
Zinc sulfide 387
Zirconate 387
Zirconium 387
Zirconium oxide 387
Zone leveling 387
Zone melting 387
Zone refining 388
Åùå ïî òåìå Àíãëî-ðóññêèé òåðìèíîëîãè÷åñêèé ñëîâàðü ïî ìèêðî- è íàíîñèñòåìíîé òåõíèêå - ñîäåðæàíèå:
- Òåðìèíîëîãè÷åñêèé ñëîâàðü
- Ñïèñîê èñïîëüçîâàííîé ëèòåðàòóðû
- ÊÐÀÒÊÈÉ ÒÅÐÌÈÍÎËÎÃÈ×ÅÑÊÈÉ ÑËÎÂÀÐÜ
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- ÃËÀÂÀ IV «ÊÓÐÜÅÇÍÛÉ ÝÏÈÇÎÄ» Â ÀÍÃËÎ-ÐÓÑÑÊÈÕ ÎÒÍÎØÅÍÈßÕ: ÏËÀÍÛ ÊÎËÎÍÈÇÀÖÈÈ ÐÓÑÑÊÎÃÎ ÑÅÂÅÐÀ
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- ÊÐÀÒÊÈÉ ÒÅÐÌÈÍÎËÎÃÈ×ÅÑÊÈÉ ÑËÎÂÀÐÜ
- 3. Àíãëî-ðóññêèé ñîþç 1907 ã.
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