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- - -

228

Ablation 228

Absorption 228

Accelerometer 228

Accelerated life testing 228

Accuracy 228

Acid 228

Actuator 228

Acoustic electromotive force element 229

Action potential 229

Active area 229

Active catheter 229

Active layer 229

Adenosine TriPhosphate (ATP) 229

Adhesion 229

Adhesive bonding 229

Adjustment 229

Adsorption 230

Aliasing 230

Aligner 230

Alignment 230

Alloy expansion actuator 230

Ambient 230

Amorphous silicon (a-Si) 230

Amplification 231

Anchor 231

Annealing 231

Anisotropic etching 231

Anisotropy 231

Anodic bonding 231

Application-Specific Integrated Circuit (ASIC) 231

Aqueous 232

ARDE (Aspect Ratio Dependent Etching) 232

Area array 232

Argon 232

Artificial organ 232

Ashing 232

Aspect ratio 232

Assembly 232

Astigmatic focus error detection 232

Atomic Force Microscope (AFM) 232

Autonomous distributed control 233

  233

Back-grinding 233

Backside patterning 233

Baked 233

Bandwidth 233

Batch fabrication 234

BAW sensor 234

Beam 234

Beam processing 234

Behavioral model 234

BioMEMS 234

Bimetal 234

Biomimetics 234

Birds beak 235

Boat 235

Bode plot 235

Bonding 235

Bond pad 235

Boron etch stop technique 235

Boule 235

Boundary 236

Boundary Element Analysis (BEA) 236

Bow 236

Breaking strength 236

Buckminsterfullerene 236

Buckyball 236

Buffered Oxide Etch (BOE) 236

Build-in 237

Bulk micromachining 237

Bumping 237

Buried layer 237

Burn-in 237

C 237

Caltech Intermediate Format (CIF) 237

Cantilever 237

Capacitive displacement meter 237

Capacitor 237

Carbohydride 238

Carbon Nanotube (CNT) 238

Carriers 238

Castiglianos theorem 238

Catalyst 238

Cauchy number 238

Cell 238

Cell fusion 239

Cell surgery 239

Ceramic 239

Cermet 239

Charge density 239

Charge Coupled Device (CCD) 239

Chemical bearing 239

Chemical Mechanical Polishing (CMP) 239

Chemical Vapour Deposition (CVD) 240

Chemo-Mechanical Planarization (CMP) 240

Chromatography 240

Circuit layout 240

Clamp 240

Clean room 240

Closed-loop feedback 240

Coating 240

Coefficient of static friction 241

Coefficient of Thermal Expansion (CTE) 241

Coherently Diffracting Domains (CDD) 241

Comb drive 241

Compound 241

Computer-Aided Design (CAD) 241

Concentration dependent etching 241

Conductor 241

Conformal 242

Conservation law 242

Contact lithography 242

Contact printing 242

Copolymer 242

Cost of ownership 242

Coupling coefficient 243

Covalent bond 243

Cross-axis sensivity 243

Cross section 243

Crucible 243

Ciystal orientation 243

Curie point 243

Curve fitting 243

Czochralski method 244

D 244

Damascene 244

Damping matrix 244

Deep Reactive Ion Etching (DRIE) 244

Deflection 244

Deformation 244

Deionized water 244

Dendrimer 244

Density 245

Deposition 245

Descum 245

Design kit 245

Design layout and validation 245

Design of Experiments (DOE) 245

Design rules 245

Deviation 245

Devitrification 245

Device 246

Die 246

Dielectric constant 246

Differential Algebraic Equations (DAEs) 246

Difference quantity 246

Diffraction 246

Diffusion 246

Diffusion bonding 247

Diffusion gauge 247

Dislocation 247

Dissolved wafer process 247

Doping 247

Dose (Q) 247

Drift 248

Dry etching 248

Dry strip 248

Durability 248

E 248

Efficiency 248

Ejection 248

Elasticity 249

Elastomer 249

Electrochemical etch stop technique 249

Electrochemical passivation technique 249

Electro-Discharge Machining (EDM) 249

Electroforming 250

Electromagnetic actuator 250

Electromagnetic waves 250

Electromigration 250

Electron 251

E-beam lithography (electron beam lithography) 251

Electronic Design Automation (EDA) 251

Electronic nose (e-nose) 251

Electron Probe MicroAnalysis (EPMA) 251

Electroplate 252

Electrostatic actuator 252

Electrostatic Discharge (ESD) 252

Electrostatic Force Microscope (EFM) 253

Ellipsometer 253

Emitter 253

Emulsion mask 253

Enthalpy 254

Enzymes 254

Epipoly 254

Epitaxy 254

Equilibrium process 254

Equilibrium state 254

Etchback planarization 255

Etch hole 255

Etching 255

Etch pit 255

Etch profile 255

Etch rate 255

Etch stop 255

Etch-stop technique 256

Ethylene Diamine Pyrocatechol (EDM) 256

Ethylene glycol 256

Eutetic bonding 256

Eutetic point 256

Evaporation 256

Excimer laser 256

Eximer laser micromachining 257

Exposure 257

Extrinsic 257

F 257

Fabrication 257

Fault models 258

Ferroelectric 258

Film electrostatic actuator 258

Finite Element Analysis (FEA) 258

Fixed-fixed beam 259

Flagellar motor 259

Flat pack 259

Flexible microactuator 259

Flip chip 259

Flow quantity 260

Flow sensor 260

Fluorosilicate Glass (FSG) 260

Focused Ion Beam (FIB) 260

Focused ion beam machining 260

Foundry 261

Fourier number 261

Frequency 261

Frequency domain 261

Frequency response 261

Friction 261

Froude number 262

Fullerene 262

Fusion bonding 262

G 263

Gain 263

Gallium arsenide (GaAs) 263

Gap 264

Gap model 264

Gel 264

Germanium 264

Gettering 264

Glass 264

Glassivation 264

Grain 265

Graphic Design Station II (GDSII) 265

Grinding 265

Groove 265

H 265

Hall effect sensor 265

Hard bake 265

Hardened photoresist 266

Hardness 266

Hardware Description Language (HDL) 266

HDL-A/MS 266

Hertz 266

Heteroepitaxy 266

Hexamethyl Disilazane (HM DS) 266

High Aspect Ratio Micromachining (HARM) 267

High-Efficiency Particle Air (HEPA) 267

High energy ion implantation 267

High pressure oxidation 267

Hillock 268

Hole 268

Homoepitaxy 268

Homogeneous 268

Honing 268

Hot embossing 268

Hydraulic actuator 269

Hydrazine 269

Hydrofluoric acid (HF) 269

Hydrogen 269

Hydrogen storage alloy 269

Hysteresis cycle 270 270

Implantation 270

Impurity 271

Inductively coupled plasma 271

Inductor 271

Inertial sensor 272

Infrared 272

In homogeneous 272

Insulator 272

Integrated chemical analyzing system 272

Integrated Circuit (IC) 273

Integrated mass flow controller 273

Integrated MicroEIectroMechanical Systems (IMEMS) 273

Integrated microprobe 274

Integrated optics 274

Integrated strain sensor 274

Intelligent sensor 274

Interconnect, interconnection 275

Interferometer 275

Interlevel planarization 276

Intrinsic 276

Ion 276

Ion beam etching 276

Ion beam machining 277

Ion beam milling 277

Ion implantation 278

Ion plating 278

Ion Sensitive Field Effect Transistor (ISFET) 279

Ionized metal plasma physical vapor deposition 279

Ionic bond 279

Isolation 279

Isolation diffusion 280

Isotropic 280

Isotropic etching 280

Isovalent doping 280

J 281

Josephson junction 281

Joule effect 281

Junction 282

Junction Field Effect Transistor (JFET) 282

ʠ 283

Killer defect 283

Kilo 283

Kinesin 283

KirchHoffian Network (KHN) 283

Known Good Die (KGD) 284

KrI 284

L 284

Lab-on-chip 284

Laminar flow 285

Langmuir-Blodgett film 285


Lapping 285

Laser-assisted Chemical Vapour Deposition (LCVD) 285

Laser drilling 286

Laser interferometry 286

Laser tweezers 286

Lattice 286

Layer thickness 286

Layer Thickness Variation (LTV) 287

Layout 287

Leadframe 287

Leakage current 287

Left-hand orthogonal crystallographic axial set 287

Lewis acid 287

Lewis base 288

Lift-off technique 288

LIGA 288

Light driven actuator 289

Light scattering 289

Linear actuator 289

Linearity 289

Liquid crystal 289

Lithography 291

Loaded brush 292

Localized Electrochemical Deposition (LED) 292

LOCOS (LOCal Oxidation of Silicon) 292

Lost wafer process 292

Low- material 292

Low Pressure Chemical Vapor Deposition (LPCVD) 293

Low Temperature Oxide (LTO) 293

Luminescence 293

Lumped parameters 294

M 294

M3S (Modular Monolithic MEMS) 294

Magnetoresistive Random-Access Memories (MRAMs) 295

Mask 295

Mechanical shock 295

Melt 295

MEMCAD (MicroElectroMechanical Computer-Aided Design) 295

MEMS Industry Group (MIG) 296

Mesoscale machining 296

Metallization 296

Microchamber 296

Microcutting and grinding 296

Microdrilling 296

MicroElectroMechanical Systems (MEMS) 296

Microelectronics Center of North Carolina (MCNC) 297

Microengineering 297

MicroFlumes (Micro Fluidic molecular systems) 297

Microforging 297

Microgripper 297

Microgyroscopy 297

Microinjection Molding (MIM) 297

Micromilling 298

Micromirrors 298

Micromolding 298

Micron 298

Micro Optical Electro Mechanical Systems (MOEMS) 298

Micropump 299

Microrelay 299

Microscopic surgery 299

Microsensor 299

Microstructures 300

Microsystems technology 300

Microswitch 300

MicroTAS (MicroTotal Analysis System, mTAS) 300

Microtechnology 300

Microtribology 300

Microtweezer 301

Microvalve 301

Microwave 301

Miller index 301

Modification 302

Modified Nodal Analysis (MNA) 302

Modular System for Constraint Nonlinear Microsystem Optimization

(MOSC1TO) 303

Mohs scratch hardness 303

Molecular dynamics 303

Molecular Beam Epitaxy (MBE) 304

Molecular layer epitaxy 304

Monte-Carlo method 304

Moores law 304

MOSIS (Metal Oxide Semiconductor Implementation System) 304

Movable part 305

Moving mask lithography process 305

Multidomain system 305

Multipole 305

Multi-User MEMS Process (MUMPs) 305

Murphy-Seeds model 307

N 307

Nanometer 307

Nanotechnology 307

Native oxide 307

Negative lithography 307

Negative resist 307

Netlist 307

Nitinol (nickel titanium alloy) 308

Nitric acid (HN03) 308

Nitride 308

Nitrogen 308

Nitrous oxide (N20) 308

Nodal analysis 308

Node 309

Noise density 309

Non-contact handling 309

Nonlinearity 309

Notch 309

Novolak 309

Numerical Aperture (NA) 309

N-well 309

Π 309

Ohmic contact 309

Operating temperature 310

Optical attenuator 310

Optical lithography 310

Optical Proximity Correction (OPC) 310

Optical pyrometer 310

Optoceramic materials 310

Ordinary Differential Equations (ODEs) 310

Osmosis 310

Outgassing 311

Overlay 311

Overlay budget 311

Oxidation 311

Oxygen 311

P 311

Package 311

Packaging 312

Partial Differential Equations (PDEs) 312

Passivation 312

Patterned etching 312

Pattern generator 312

Pattern wafers 313

Patterning 313

Pellicle 313

Perovskite 313

Phase transition 313

Phonon 313

Phosphine 314

Phosphorus 314

Photo-Acid Generator (PAG) 315

Photodiode 315

Photolithography 315

Photomask 316

Photopolymerizalion 316

Photoresist 316

Photostrictive actuator 317

Photostrictive effect 317

Photovoltaic cell 317

Physical Liquid Deposition (PLD) 318

Piezoceramic 318

Piezoelectric actuator 318

Piezoelectric constant 319

Piezoelectric linear actuator 319

Piezoelectric material 319

Pinhole 320

Pipe inspection microrobot 320

Plasma Enhanced Chemical Vapor Deposition (PECVD) 321

Plasma etching 321

Plastic defonnalion 322

Plasticizer 322

PLZT 322

Pneumatic rubber actuator 322

Point defects 322

Poissons ratio 323

Polimer 323

Polishing 324

Polishing pads 324

Polycide 324

PolyDiMethylSiloxane (PDMS) 324

Polyimide 325

Polymer actuator 325

PolyMethylMethAcrylate (PMMA) 325

Polysilicon (polycrystalline silicon) 325

PolyVinyliDene Chloride (PVDC) 326

PolyVinyliDeneFlouride (PVDF) 326

Porosilicon 326

Positive photoresist 328

Post-Exposure Bake (PEB) 328

Potassium hydroxide (KOH) 328

Powder blasting 328

Power 329

Precise positioning 329

Precision 329

Precursor 329

Pressure sensor 329

Principal Component Analysis (PCA) 329

Probing 329

Process design rules 329

Projection lithography 329

Proof mass 330

Proximity aligner 331

Proximity lithography 331

P-type silicon 331

Purge 331

Pyrex 331

Pyroelectric 331

Pyrolysis 332

PZT 332

Q 332

Quad Flat Pack (QFP) 332

Quadrupole illumination 332

Quadrupole Mass Analyzer (QMA) 332

Qualification 332

Quality Factor (Q Factor) 333

Quantum dot 333

Quantum physics 333

Quantum well 334

Quartz 334

Quartz micro balance sensor module 334

R 335

Radical 335

Radio Frequency (RF) 335

Range 335

Rapid Thermal Processing (RTP) 335

RCA clean 335

Reaction Injection Molding (RIM) 335

Reactive Ion Etching (RIE) 335

Reactivity 335

Recombinant DNA 336

Recrystallization 336

Redistribution 336

Reduced system 336

Reduction 336

Reflow 336

Refractive index 336

Refractory 337

Registration overlay 337

Release etch 337

Released layers 337

Remanent polarization 337

Repeatability 337

Replication 337

Reproducibility (of measurement) 337

Residual stress 337

Resistance 337

Resolution 337

Resonator 337

Response characteristic 338

Response time 338

Reticle 338

Retrograde well 338

Reynolds number 338

RF MEMS 339

RF sputtering 339

Rhodopsin 339

RiboNucleic Acid (RNA) 339

Right-hand orthogonal crystallographic axial set 339

Rinse 339

Rochelle salt 339

Rotaiy actuator 339

S 340

Sacrificial anode 340

Sacrificial layer 340

Sacrificial Layer Etching (SLE) 340

Scale effect 340

Scaling 341

Scanning Electron Microscope (SEM) 341

Scanning Probe Microscope (SPM) 342

Scanning Tunneling Microscope (STM) 342

Schottky contact 342

Schottky defect 343

Schottky diode 343

Secondary Ion Mass Spectroscopy (SIMS) 343

Secondary structure of protein 344

Selective etching 344

Selectivity 344

Self-assembly 344

Self-heating 345

Semiconductor 345

Sensitivity 346

Separation by Implantation of Oxygen (SI MOX) 346

Shape memory alloy 346

Shape memory alloy actuator 346

Shape memory effect 346

Shape memory polymer 347

Sheet resistance 347

Shim 347

Shredinger Wave Equation (SWE) 347

Shrinkage 348

Signal-to-Noise Ratio (SNR) 348

Silane (SiH4) 348

Silicon 348

Silicon dioxide 348

Silicon fusion bonding 348

Silicon nitride 349

Silicon on Insulator (SOI) 349

Silicon on Sapphire (SOS) 350

Silicon tetrachloride 351

Simulation 351

Simulation Program for Integrated Circuits Emphasis (SPICE) 351

Single crystal 351

Single Crystal Reactive Ion Etching and Metallization (SCREAM) 351

Single Electron Device (SED) 351

Sintering 352

Slip 352

Slurry 352

Smart actuator 352

Smart dust 352

Smart pill 352

Smart sensor 353

Smart surface 353

Soft bake 353

Soft lithography 353

Sol-gel conversion actuator 353

Solid state 353

Solid-state image sensor 354

Solvent 354

Span 354

Specific heat 354

Spider bonding 354

Spin coating 354

Spontaneous emission 354

Spontaneous polarization 355

Sputtering 355

Stability 355

Standard atmosphere 355

Standard Hydrogen Electrode (SHE) 355

Static frictional force 355

Stator 355

Steady state analysis 355

Step coverage 355

Step response 356

Stepper 356

Stereochemistry 356

Stereolithography 356

Stiction 357

Stiffness 357

Stimulated emission 357

Stoichiometry 357

Strain 357

Strain gauge 357

Stress 357

Stress corrosion (cracking) 358

Stripping 358

Structural material 358

Structure unit 358

SU-8 358

Subset 358

Substrate 358

SUMMiT (Sandia Ultra Planar Multi-level MEMS Technology) 358

Superconduction levitated actuator 359

Superconductivity 359

Superconducting quantum interference device (SQUIDS) 359

Superconductor 359

Superlattice 359

Surface Acoustic Wave (SAW) actuator 360

Surface Acoustic Wave (SAW) sensors 360

Surface micromachining 361

Surface Mount Technology (SMT) 361

Surface passivation 361

Surface roughness 362

Surface smoothness 362

Surface tension 362

Swell 362

System-level model 362

T 362

Tactile sensor 362

Taper 362

Tape Automated Bonding (TAB) 362

Taq DNA polymerase 363

Target 363

Taxonomy 363

Temperature Coefficient of Resistance (TCR) 364

Tensile strength 364

Terminal 364

Tertiary structure of protein 364

Tesla 364

Tetra Ethyl Ortho Silane (TEOS) 364

Tetra Methyl Ammonium Elydroxide (TMAH) 364

Thermal actuator 365

Thermal conductivity 365

Thermal expaasion coefficient 365

Thermistor 365

Thennocompression bonding 366

Thermocouple 366

Thermoplastic polymer 366

Thermoset polymer 366

Thermosonic bonding 367

Thick film technology 367

Thin film technology 367

Threshold 367

Time-consuming 367

Titanium nitride 367

Titatium silicide 368

Torque 368

Torr 368

Torsional micromirror 368

Total Thickness Variation (TTV) 368

Toughness 368

Transcription 368

Transducer 368

Transduction mode (direct or indirect) 369

TRNA (Transfer RNA) 369

Transient analysis 369

Transient response 369

Transistor 369

Translation 370

Transmission Electron Microscope () 370

Trench 370

Tribology 370

Trigger 370

Twinning 371

Twin well 371

Tungsten Hexaflouride 371

Tungsten Inert Gas (TIG) 371

Turbulent flow 371

Type 371

U 371

U-groove 371

Ultra High Frequency (UHF) 371

Ultra Large Scale Integration (ULSI) 371

Ultra Low Penetration Air (ULPA) 371

Ultrascope 371

Ultrasonic bonding 371

Ultrasonic impact grinding 372

Ultrasonic motor 372

Ultra Thin Silicon on Sapphire (UTSi) 372

Ultraviolet cleaning 373

Ultraviolet laser exposure 373

Ultraviolet rays (UV) 373

Uncover 373

UnderBump Metallization (UBM) 373

Undercoat 373

Undercutting 373

Undoped 373

Unexposed 373

Unipolar 373

Unit cell 374

Utility fog 374

V 374

Vacancy 374

Vacuum infrared process 375

Vacuum microelectronics device 375

Valence electrons 375

Van der Pauw method 375

Van der Waals forces 375

Vapor deposition 376

Vapor plating 376

Vapor priming 376

Varactor 376

Variable gap electrostatic actuator 376

Verification 377

Vertical-Cavity Surface-Emitting Laser (VCSEL) 377

Very high-speed integrated-circuit Elardware Description Language

(VHDL) 377

V-groove 377

Via hole 377

Vibration sensor 377

Viscous force 377

Visible light 378

VisSim 378

Vitrification 378

Volatile 378

W 378

Wafer 378

Wafer bonding 378

Wafer fabrication 379

Wafer size 379

Wafer yield 379

Wafers boat 379

Water deionization 379

Watt (W) 379

Waveguide 379

Wave equation 379

Wavelength 379

Wear 379

Weber 380

Weber number 380

Welding 380

Well 380

Wet anisotropic etching 380

Wet etching 381

Wet oxidation 381

Wetting 381

Whisker 381

Wire bonding 382

Wobble motor 382

Working plate 383

Wurtzite structure 383

X 383

X-Ray 383

X-Ray Fluorescence (XRF) 383

X-Ray lithography 384

X-ray Photoelectron Spectroscopy (XPS) 384

Y 385

Yaw rate sensor 385

Yellow room 385

Yield 385

Yield model 385

Yokogawa differential resonant pressure sensor 385

Young modulus 386

Yo-yo 386

Yttrium Aluminum Garnet (YAG) 386

Yttrium Barium Copper Oxide (YBACUO) 386

Yttrium Iron Garnet (YIG) 386

Yttrium iron garnet filter 386

Z 386

Zapper (laser) 386

Zener diode 386

Zephyr 386

Zero offset 386

Zeta potential 386

Zinc oxide 387

Zinc sulfide 387

Zirconate 387

Zirconium 387

Zirconium oxide 387

Zone leveling 387

Zone melting 387

Zone refining 388

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  1. - 1907 .
  2. IV Ļ - :
  3. 3. - 1907 .
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